Method for manufacturing capacitor of semiconductor device inclu

Details Method for manufacturing capacitor of semiconductor device inclu Method for manufacturing capacitor of semiconductor device inclu

1998-08-13

2000-10-24

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438241, 438381, H01L 2170

Patent

active

061366412

ABSTRACT:
A capacitor fabricating method for a semiconductor device where a dielectric film is thermally treated under hydrogen atmosphere to improve interface characteristics between the dielectric film and an electrode. In the method, a lower electrode is formed on a semiconductor substrate. A dielectric film is formed on the lower electrode. The dielectric film is thermally treated under hydrogen atmosphere. An upper electrode is formed on the dielectric film, thereby completing formation of the capacitor. The thermal treatment under the hydrogen atmosphere is performed at a temperature of 300 to 600.degree. C. using H.sub.2 gas or H.sub.2 plasma for 5 to 60 minutes. Thus, the density of an interface trap between the electrode and the dielectric film of the capacitor is reduced.

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patent: 5978259 (1999-11-01), Son et al.
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