Method for manufacturing capacitor of semiconductor device

Details Method for manufacturing capacitor of semiconductor device Method for manufacturing capacitor of semiconductor device

2007-11-20

2007-11-20

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S387000, C257S310000

Reexamination Certificate

active

10748308

ABSTRACT:
Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.

REFERENCES:
patent: 6576053 (2003-06-01), Kim et al.
patent: 2003/0096473 (2003-05-01), Shih et al.
patent: 2004/0067657 (2004-04-01), Perng et al.
patent: 2001-0065182 (2001-07-01), None
English language abstract of Korean Publication No. 2001-0065182.

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