Method for manufacturing anti-punch through semiconductor...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S424000, C438S294000, C257SE21431

Reexamination Certificate

active

10908379

ABSTRACT:
A method for manufacturing an anti-punch through semiconductor device is described. The method is applied to a substrate having a plurality of device isolation structures in parallel arrangements and the upper surface of the device isolation structures is protruded from the surface of the substrate. A plurality of conductive layers in parallel arrangement is formed on the substrate and crosses the device isolation structures. A plurality of trench devices is formed between device isolation structures under the conductive layers. Each trench device includes a first conductive doping region at the bottom of the trench. The method further includes forming spacers on the sidewalls of the device isolation structures and the conductive layers. A dopant implant process is then performed by using the spacers as a mask to form a second conductive doping region between adjacent first conductive doping regions.

REFERENCES:
patent: 5705840 (1998-01-01), Shen et al.
patent: 6649481 (2003-11-01), Wu

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