Method for manufacturing a transistor device having an...

Details Method for manufacturing a transistor device having an... Method for manufacturing a transistor device having an...

2008-05-13

2008-05-13

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S510000, C438S514000, C438S548000, C438S766000, C257S408000, C257S369000, C257SE21335, C257SE21336, C257SE21345, C257SE21633

Reexamination Certificate

active

11469512

ABSTRACT:
The present invention provides a method for manufacturing a transistor device, and a method for manufacturing an integrated circuit including the same. The method for manufacturing the transistor device, among other elements, includes forming a gate structure over a substrate, implanting an atom selected from the group consisting of fluorine, silicon, or germanium into the substrate proximate the gate structure to cause at least a portion of the substrate to be in a sub-amorphous state, and implanting a dopant into the substrate having the implanted atom therein, thereby forming source/drain regions in the substrate, wherein the transistor device does not have a halo/pocket implant.

REFERENCES:
patent: 5372960 (1994-12-01), Davies et al.
patent: 6847089 (2005-01-01), Chakravarthi et al.
patent: 7018888 (2006-03-01), Goodlin et al.
patent: 2006/0024872 (2006-02-01), Goodlin et al.

Affiliated with

Also associated with

Rating

Method for manufacturing a transistor device having an... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a transistor device having an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a transistor device having an... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3949235