Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-06-03
2000-11-14
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438279, 438287, 438706, 438714, 438735, 438770, 438787, 438798, H01L 21336, H01L 21302, H01L 21461
Patent
active
061469483
ABSTRACT:
A method for forming a gate dielectric having different thickness begins by providing a substrate (12). A sacrificial oxide (14) is formed overlying the substrate (12). A first portion (11) of the sacrificial oxide (14) is exposed to a carbon-containing plasma environment (20). This carbon-containing plasma environment (20) forms a carbon-containing layer (24) within the region (11). After forming this region (24), a wet etch chemistry (22) is used to remove remaining portions of the sacrificial oxide (14) without forming a layer (24) in the region (13). Furnace oxidation is then used to form regions (26a) and (26b) wherein the growth of region (26a) has been retarded by the presence of the region (24). Therefore, the regions (26a) and (26b) are differing in thickness and can be used to make different transistors having different current gains.
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Crabtree Phillip Earl
Lii Yeong-Jyh Tom
Tseng Hsing-Huang
Wu Wei Edwin
Jr. Carl Whitehead
Motorola Inc.
Park James
Witek Keith E.
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