Method for manufacturing a TFT SRAM memory device with improved

Details Method for manufacturing a TFT SRAM memory device with improved Method for manufacturing a TFT SRAM memory device with improved

1998-02-27

1999-09-14

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438381, 438151, H01L 218244

Patent

active

059536063

ABSTRACT:
A method of forming a contact between a conductor and a substrate region in a MOSFET SRAM starts with forming a dielectric layer on the surface of a partially completed SRAM device with pass and latch transistors covering the transistors. Then, form a thin film gate electrode and an interconnect on the dielectric layer with a gate oxide layer covering the gate electrode and the interconnect; cover the gate oxide layer with a poly conductive layer. Then form a silicon oxide layer over the poly conductive layer and pattern the silicon oxide layer to form a silicon oxide channel mask over the poly conductive layer which is used to pattern the silicon oxide layer into a channel mask over the gate electrode. The channel mask is used for patterning the implanting of dopant into the poly conductive layer aside from the channel mask to form a source region, a drain region and an interconnect in the poly conductive layer. Then form a contact through the gate oxide layer between the interconnect and the poly conductive layer by forming a tungsten layer over the poly conductive layer aside from the channel mask which remains in place.

REFERENCES:
patent: 5576243 (1996-11-01), Wuu et al.

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