Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-01-08
1998-12-08
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438277, 438282, H01L 218246, H01L 218234
Patent
active
058468633
ABSTRACT:
A semiconductor memory device and a method for manufacturing the same are disclosed. The device includes a plurality of active regions repeatedly formed extending in parallel to each other, a device isolation region, a plurality of first gate electrodes repeatedly arranged being perpendicular to the active region and device isolation region, a source/drain region formed by being self-aligned ion-implanted into the first gate electrode, active region, and device isolation region, and a second gate electrode located between the first gate electrodes, extending in parallel to the first gate electrode, sharing the source/drain with the first gate electrode, and using the device isolation region as a channel. Thus, cell integration can be enhanced, and high speed operation and excellent yields can be easily ensured.
REFERENCES:
patent: 4180826 (1979-12-01), Shappir
patent: 5394356 (1995-02-01), Yang
Jun Sung-bu
Lee Woon-kyung
Chang Joni
Samsung Electronics Co,. Ltd.
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