Method for manufacturing a semiconductor memory device having ca

Details Method for manufacturing a semiconductor memory device having ca Method for manufacturing a semiconductor memory device having ca

1996-02-23

1998-12-08

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438240, 148DIG148, H01L 218242

Patent

active

058468595

ABSTRACT:
A capacitor in a semiconductor device having a dielectric film formed of high dielectric material and a manufacturing method therefor are provided. The capacitor consists of electrodes including a dielectric film and an amorphous SiC layer. Thus, the diffusion of oxygen atoms through a grain boundary into an underlayer and the formation of an oxide layer on the surface of the SiC layer can both be prevented, providing for a highly reliable capacitor electrode and an equivalent oxide thickness which is no thicker than required.

REFERENCES:
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4847215 (1989-07-01), Hanaki et al.
patent: 5206787 (1993-04-01), Fujioka
patent: 5607874 (1997-03-01), Wang et al.
patent: 5641702 (1997-06-01), Imai et al.

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