Method for manufacturing a semiconductor device having a ferroel

Details Method for manufacturing a semiconductor device having a ferroel Method for manufacturing a semiconductor device having a ferroel

1996-10-30

1998-11-10

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 438253, 438396, H01L 218242, H01L 2120, H01L 2100

Patent

active

058343482

ABSTRACT:
In a semiconductor device having a ferroelectric capacitor and manufacturing method thereof, a spacer comprising a low dielectric constant material is formed on the side surfaces of a plurality of lower electrodes separated into each cell unit, and a ferroelectric film is formed on the lower electrodes whereon the low dielectric constant material spacer is formed, and an upper electrode is formed on the ferroelectric film, to thereby prevent an error which may be caused between the adjacent lower electrodes.

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