Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2007-03-06

2007-03-06

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S532000, C438S918000

Reexamination Certificate

active

11201843

ABSTRACT:
Provided is a method for manufacturing a semiconductor device comprising forming a device isolation layer on a semiconductor substrate; forming gate insulating layers on the upper part of the semiconductor substrate having the device isolation layers formed thereon; forming an undoped layer for a gate electrode; implanting mixed dopant ions consisting of at least two dopant ions containing11B ions into the undoped layer, utilizing an ion-implantation mask; and heat-treating the mixed dopant ion-implanted layer.

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