Method for manufacturing a semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S589000

Reexamination Certificate

active

07118975

ABSTRACT:
Provided is a method for manufacturing semiconductor devices including channel trenches that are separated by isolation structures. According to the process, the substrate is etched to form isolation trenches after which a sidewall oxide layer, a liner nitride layer and a field oxide layer are subsequently formed on the substrate and in the isolation trenches. The substrate is then planarized to remove upper portions of the sidewall oxide layer, the liner nitride layer and the field oxide layer to expose surface portions of the substrate between adjacent isolation trench structures. Channel trenches are then formed in the exposed surface portions of the substrate leaving residual substrate regions adjacent the isolation trench structures. These residual substrate regions are then oxidized and removed to form improved second channel trenches for the formation of transistor regions.

REFERENCES:
patent: 5723376 (1998-03-01), Takeuchi et al.
patent: 6222225 (2001-04-01), Nakamura et al.
patent: 6448139 (2002-09-01), Ito et al.
patent: 6548374 (2003-04-01), Chung
patent: 1998-065787 (1998-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3708855

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.