Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-27
2008-05-27
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S085000, C438S575000, C438S582000, C257SE51007, C257SE29013, C257SE29015, C257SE29020
Reexamination Certificate
active
11116551
ABSTRACT:
A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer of metal oxide having a first heat of formation is formed on the first layer of dielectric material. A metal layer having a second heat of formation is formed on the metal oxide layer. The second heat of formation is greater than the first heat of formation. The metal oxide layer and the metal layer are annealed which causes the metal layer to reduce the metal oxide layer to metallic form, which then agglomerates to form metal islands. The metal layer becomes oxidized thereby embedding the metal islands within an oxide layer to form a nanocrystal layer. A control oxide is formed over the nanocrystal layer and a gate electrode is formed on the control oxide.
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Chiu Robert
Krivokapic Zoran
Pangrle Suzette Keefe
Wang Connie Pin-Chin
You Lu
Advanced Micro Devices , Inc.
Farjami & Farjami LLP
Lindsay, Jr. Walter
Mustapha Abdulfattah
Spansion LLC
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