Method for manufacturing a double bitline implant

Details Method for manufacturing a double bitline implant Method for manufacturing a double bitline implant

2007-06-19

2007-06-19

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C257SE21135

Reexamination Certificate

active

10431321

ABSTRACT:
The present invention provides a method of fabricating a doped semiconductor region comprising selectively implanting a first impurity to form a shallow heavily doped region. The method further comprises selectively implanting the first impurity to also form a deep more heavily doped region, disposed laterally within the shallow heavily doped region and vertically within and below the shallow heavily doped region. In an optional feature of the present invention, the method further comprises selectively implanting a second impurity, wherein the doping profile of the deep more heavily doped region is graded.

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