Method for manufacturing a buried transistor

Details Method for manufacturing a buried transistor Method for manufacturing a buried transistor

1997-09-19

1999-07-06

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438200, 438230, 438297, 438589, 438241, H01L 21336

Patent

active

059207841

ABSTRACT:
A method for manufacturing a buried transistor, which includes the steps of forming a field oxide layer in a substrate, the field oxide region having a central portion having a greater thickness than opposite edge portions thereof, forming source/drain regions in the substrate, on opposite sides of the field oxide layer, removing the field oxide layer, and forming a gate electrode on the resultant structure.

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