Method for making semiconductor structures implementing...

Details Method for making semiconductor structures implementing... Method for making semiconductor structures implementing...

2011-01-25

2011-01-25

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S631000, C438S637000, C257SE21581, C257SE23144

Reexamination Certificate

active

07875548

ABSTRACT:
Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional.

REFERENCES:
patent: 5219791 (1993-06-01), Freiberger
patent: 6064118 (2000-05-01), Sasaki

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