Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device
Reexamination Certificate
2006-09-29
2011-11-08
Landau, Matthew (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Charge transfer device
C438S048000, C257SE21532, C257SE27133
Reexamination Certificate
active
08053287
ABSTRACT:
A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel.
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Taiwanese Patent Office, mailed Feb. 22, 2010, Application No. 32589, 5 pages.
Hsu Tzu-Hsuan
Yaung Dun-Nian
Crawford Latanya N
Haynes and Boone LLP
Landau Matthew
Taiwan Semiconductor Manufacturing Company , Ltd.
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