Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-08-16
2011-08-16
Jackson, Jr., Jerome (Department: 2815)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE29161
Reexamination Certificate
active
07998881
ABSTRACT:
Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide boron doped carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.
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Sims James S.
Singhal Akhil
Sriram Mandyam
Varadarajan Seshasayee
Wu Qingguo
Budd Paul A
Jackson, Jr. Jerome
Novellus Systems Inc.
Weaver Austin Villeneuve & Sampson LLP
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