Method for making high density nonvolatile memory

Details Method for making high density nonvolatile memory Method for making high density nonvolatile memory

2006-04-11

2006-04-11

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S593000, C257S313000, C257S314000, C257S315000, C257S316000

Reexamination Certificate

active

07026212

ABSTRACT:
An improved method for fabricating a three dimensional monolithic memory with increased density. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming semiconductor elements preferably comprising two diode portions and an antifuse, then filling and planarizing; and continuing to form conductors and semiconductor elements in multiple stories of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.

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patent: 6111784 (2000-08-01), Nishimura
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6567301 (2003-05-01), Anthony et al.
patent: 6584029 (2003-06-01), Tran et al.
patent: 6693823 (2004-02-01), Brown

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