4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Thin active physical layer which is
  6. Heterojunction

S. Brad Herner

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Bottom-gate SONOS-type cell having a silicide gate

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate

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Bottom-gate sonos-type cell having a silicide gate

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate

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Deposited semiconductor structure to minimize N-type dopant...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
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Deposited semiconductor structure to minimize n-type dopant...

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate

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Deposited semiconductor structure to minimize n-type dopant...

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2197000

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