Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-15
2005-02-15
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S308000, C438S652000
Reexamination Certificate
active
06855630
ABSTRACT:
A method makes contact with a doping region formed at a substrate surface of a substrate. An insulating layer is applied on the substrate surface and a contact hole is formed in the insulating layer. A metal-containing layer is subsequently deposited on the insulating layer and the surface region of the doping region that is uncovered by the contact hole. In a subsequent thermal process having two steps, first the metal-containing layer is reacted with the silicon of the doping region to form a metal silicide layer and then the rest of the metal-containing layer is converted into a metal-nitride-containing layer in a second thermal step.
REFERENCES:
patent: 4545116 (1985-10-01), Lau
patent: 4701349 (1987-10-01), Koyanagi et al.
patent: 5434044 (1995-07-01), Nulman et al.
patent: 5639678 (1997-06-01), Lee et al.
patent: 5933741 (1999-08-01), Tseng
patent: 6001729 (1999-12-01), Shinriki et al.
patent: 6069093 (2000-05-01), Tada et al.
patent: 6071782 (2000-06-01), Maa et al.
patent: 6121134 (2000-09-01), Burton et al.
patent: 6228667 (2001-05-01), Cathey et al.
Kaneko, H. et al.: “Novel Submicrometer MOS Devices by Self-Aligned Nitridation of Silicide”, IEEE, Transactions on Electron Devices, vol. ED-33, No. 11, Nov. 1986, pp. 1702-1709.
Kamgar, A. et al.: “Self-Aligned TiN Barrier Formation by Rapid Thermal Nitridation of TiSi2in Ammonia”, American Institute of Physics, J. Appl. Phys., vol. 66, No. 6, Sep. 15, 1989, pp. 2395-2401.
Inoue, K. et al.: “A New Cobalt Salicide Technology for 0.15- μm CMOS Devices”, IEEE Transactions on Electron Devices, vol. 45, No. 11, Nov., 11, 1998, pp. 2312-2318.
Chen, S. C. et al.: “Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon”, Japanese Journal of Applied Physics, vol. 30, No. 11A, Nov. 1991, pp. 2673-2678.
Tolia, A. et al.: “Integrated IMP Ti and MOCVD TiN for 300mm W Barrier and Liner for Sub 0.18 μm IC Processing”, SPIE, vol. 3883, Sep. 1999, pp. 130-136.
Kanamura, R. et al.: “Influence of the Sputtering Method of TiN/Ti Films on the Resistance of High Aspect Ration Contact Holes”, VMIC Conference, Jun. 18-20, 1996, pp. 554-559.
Gambino, J. et al.: “Tungsten Contacts for a 256m DRAM Process Using a Thermally Formed TiN Diffusion Barrier”, VMIC Conference, Jun. 18-20, 1996; pp. 180i-180k.
Dixit, G. A. et al.: “Ion Metal Plasma (IMP) Deposited Titanium Liners for 0.25/0.18 μm Multilevel Interconnections”, IEEE, 1996, pp. 14.3.1-14.3.4.
Author not listed: “Physical Vapor Deposition Process BKM: Vectra IMP Ti”, Applied Materials Inc., 2000, pp. 1-30.
Ermolieff, A. et al.: “Nitridation of Polycrystalline Titanium as Studied by in situ Angle-Resolved X-ray Photoelectron Spectroscopy”, John Wiley & Sons, Ltd., Surface and Interface Analysis, vol. 11, Jan. 18, 1988, pp. 563-568.
Claussen Wilhelm
Gärtner Thomas
Ruf Alexander
Schmidbauer Sven
Urbansky Norbert
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Luu Chuong Anh
Smith Matthew
LandOfFree
Method for making contact with a doping region of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making contact with a doping region of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making contact with a doping region of a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3472291