Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S231000, C257SE21639
Reexamination Certificate
active
10742678
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and forming a sacrificial layer on the high-k gate dielectric layer. After etching the sacrificial layer, first and second spacers are formed on opposite sides of the sacrificial layer. After removing the sacrificial layer to generate a trench that is positioned between the first and second spacers, a metal layer is formed on the high-k gate dielectric layer.
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Barns Chris E.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Chaudhari Chandra
Engineer Rahul D.
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