Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2007-01-09
2007-01-09
Deo, Duy-Vu N (Department: 1765)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S197000, C438S199000, C438S275000
Reexamination Certificate
active
10739173
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a dummy dielectric layer that is at least about 10 angstroms thick on a substrate, and forming a sacrificial layer on the dummy dielectric layer. After removing the sacrificial layer and the dummy dielectric layer to generate a trench that is positioned between first and second spacers, a gate dielectric layer is formed on the substrate at the bottom of the trench, and a metal layer is formed on the gate dielectric layer.
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Brask Justin K.
Chau Robert S.
Doczy Mark L.
Kavalieros Jack
Metz Matthew V.
Deo Duy-Vu N
Engineer Rahul D.
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