Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-16
2006-05-16
Wilson, Christian D. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000
Reexamination Certificate
active
07045431
ABSTRACT:
Methods are disclosed that fabricating semiconductor devices with high-k dielectric layers. The invention removes portions of deposited high-k dielectric layers not below gates and covers exposed portions (e.g., sidewalls) of high-k dielectric layers during fabrication with an encapsulation layer, which mitigates defects in the high-k dielectric layers and contamination of process tools. The encapsulation layer can also be employed as an etch stop layer and, at least partially, in comprising sidewall spacers. As a result, a semiconductor device can be fabricated with a substantially uniform equivalent oxide thickness.
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Bevan Malcolm John
Bu Haowen
Colombo Luigi
Mercer Douglas E.
Rotondaro Antonio L. P.
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wilson Christian D.
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