Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-16
2011-08-16
Nguyen, Ha T. (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S189000, C438S312000, C438S313000, C438S234000, C257S197000, C257S205000, C257S477000, C257S565000, C257S183000
Reexamination Certificate
active
07998807
ABSTRACT:
A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.
REFERENCES:
patent: 2569347 (1951-09-01), Shockley
patent: 4485391 (1984-11-01), Poulain et al.
patent: 4710936 (1987-12-01), Shibata et al.
patent: 4845535 (1989-07-01), Yamanishi et al.
patent: 4958208 (1990-09-01), Tanaka
patent: 5003366 (1991-03-01), Mishima et al.
patent: 5239550 (1993-08-01), Jain
patent: 5293050 (1994-03-01), Chapple-Sokol et al.
patent: 5334854 (1994-08-01), Ono et al.
patent: 5389804 (1995-02-01), Yokoyama et al.
patent: 5399880 (1995-03-01), Chand
patent: 5414273 (1995-05-01), Shimura et al.
patent: 5543749 (1996-08-01), Awano
patent: 5780880 (1998-07-01), Enquist
patent: 6337494 (2002-01-01), Ryum et al.
patent: 6479844 (2002-11-01), Taylor
patent: 6556610 (2003-04-01), Jiang et al.
patent: 6727530 (2004-04-01), Feng et al.
patent: 6737684 (2004-05-01), Takagi et al.
patent: 7247892 (2007-07-01), Taylor
patent: 2002/0030195 (2002-03-01), Yoshii et al.
patent: 2003/0030126 (2003-02-01), Hirose
patent: 61231788 (1986-10-01), None
patent: 04237135 (1992-08-01), None
P. Grossman, and J. Choma, Jr., “Large Signal Modeling of HBT's Including Self-Heating and Transit Time Effects” IEEE Transactons on Microwave Theory and Techniques, vol. 40, No. 3, Mar. 1992.
Y. Mori, J. Shibata, Y. Sasai, H. Serizawa, and T. Kajiwara, “Operation Principle of the InGaAsP/InP Laser Transistor”, Appl. Phys. Lett. 47(7), Oct. 1, 1985.
J. Genoe, C. Van Hoof, K. Fobelets, R. Mertens, and G. Borghs, “pnp Resonant Tunneling Light Emitting Transistor” Appl. Phys. Lett. 62 (9), Aug. 31, 1992.
P. Berger, N. Chand, and N. Dutta, “An AIGaAs Double-Heterojunction Bipolar Transistor Grown by Molecular-Beam Epitaxy”, Appl. Phys. Lett. 59 (9), Aug. 26, 1991.
E. Zanoni, L. Vendrame, and P. Pavan, “Hot-Electron Electroluminescence in AlGaAs/GaAs Heterojunction Bipolar Transistors”, Appl. Phys. Lett. 62 (4), Jan. 25, 1993.
M. Harris, B. Wagner, S. Halpern and M. Dobbs, “Full Two-Dimensional Electroluminescent (EL) Analysis of GaAs/AlGaAs HBTs”, IEEE 99CH36296. 37thAnnual International Reliability Physics Symposium, San Diego., California, 1999.
K. Wang, P. Asbeck, M. Chang, G. Sullivan, and D. Millar, “Noninterfering Optical Method of HBT Circuit Evaluation”, Electronics Letters, vol. 25 No. 17, Aug. 17, 1989.
J. Bardeen and W.H. Brattain, “The Transistor, A Semi-conductor Triode,” Physical Review 74, 230-234 (1948).
W. Shockley, “The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors,” Bell System Technology Journal 28, 435-489 (1949).
R.N. Hall, G.E. Fenner, J.D. Kingsley, T.J. Soltys, and R.O. Carlson, “Coherent Light Emission From GaAs Junctions,” Phys. Rev. Lett., vol. 9. pp. 366-368, Nov. 1, 1962.
M.I. Nathan, W.P. Dumke, G. Burns, F.H. Dill, Jr., and G. Lasher, “Stimulated Emission of Radiation From GaAs p-n Junction,” Appl. Phys. Lett., vol. 1, pp. 62-64. Nov. 1962.
N. Holonyak, Jr. and S.F. Bevacqua, “Coherent (Visible) Light Emission From GaAs1−xPxJunctions,” Appl. Phys. Lett., vol. 1, pp. 82-83, Dec. 1962.
T.M. Quist, R.H. Rediker, R.J. Keyes, W.E. Krag, B. Lax, A.L. McWhorter, and H.J. Zeiger, “Semiconductor Maser of GaAs,” Appl. Phys. Lett., vol. 1. pp. 91-92, Nov. 1962.
H. Kroemer, “Theory of a Wide-Gap Emitter for Transistors,” Proceedings of the IRE 45, 1535-1537 (1957).
W. Hafez, J.W. Lai and M. Feng, “InP/InGaAs SHBTs with 75 nm Collector and fr>500 GHz”, Electronic Letters, vol. 39, No. 20, Oct. 2003.
W. Hafez, J.W. Lai, and M. Feng “Record fTand fT+fMAXPerformance of InP/InGaAs Single Heterojunction Bipolar Transistors,” Electronics Letters, May 2003.
W. Hafez, J.W. Lai, and M. Feng. “Sub-micron InP/InGaAs Single Heterojunction Bipolar Transistors With fTof 377 GHz,” IEEE Electron Device Letters, May 2003.
W. Hafez, J.W. Lai and M. Feng, “Vertical scaling of 0.25 um Emitter InP/InGaAs Single Heterojunction Bipolar Transistors With fTof 452 GHz,” IEEE Electron Devices Letters, Jul. 2003.
P. Enquist, A. Paolella, A.S. Morris, F.E. Reed, L. DeBarros, A.J. Tessmer, and J.A. Hutchby, “Performance Evaluation of Heterojunction Bipolar Transistors Designed for High Optical Gain”, Research Triangle Institute, Research Triangle Park, NC, ARL, Research Laboratory, Ft. Monmouth, NJ, Applied Research and Technology, Wake Forest, NC, IEEE, pp. 278-287, 1995.
Yukihiko Arai, Masaaki Sakuta, Hiroshi Takano, Takashi Usikubo, Ryozo Furukawa, and Masao Kobayashi, “Optical Devices From AlGaAs-GaAs HBTs Heavily Doped With Amphoteric Si”, IEEE Transactoins on Electron Devices, pp. 632-638, Vo. 42. No. 4, Apr. 1995.
G.W. Taylor, R.S. Mand, J.G. Simmons, and A.Y. Cho, “Ledistor—A Three-Terminal Double Heterostructure Optoelectronic Switch”, Appl. Phys. Lett. 50 (6), Feb. 9, 1987.
N. Holonyak “Quantum-Well and Superlattice Lasers: Fundamental Effects” pp. 1-18, in “The Physics of Submicron Structures”, Plenum Press, 1984.
V. Ryzhii, M. Willander, M. Ryzhii and I. Khmyrova, “Heterostructure Laser-Transistors Controlled by Resonant-Tunnelling Electron Extraction”, Semicond. Sci. Technol. 12 (1997) 431-438.
V. Ryzhi and I. Khmyrova, “Bistability Effect in Laser-Transistor Resonant-Tunneling Structure” Solid-State Electronics vol. 37 Nos. 4-6 pp. 1259-1262, 1994.
R. Bhat, W.-P. Hong, C. Caneau, M. A. Koza, C.-K. Nguyen, and S. Goswami, “InP/GaAsSb/InP and InP/GaAsSb/InGaAsP Double Heterojunction Bipolar Transistors With a Carbon-Doped Base Grown by Organometallic Chemical Vapor Deposition” Appl. Phys. Lett. 68, 985 (1996).
T. McDermott, E. R. Gertner, S. Pittman, C. W. Seabury, and M. F. Chang, “Growth and Doping of GaAsSb Via Metalorganic Chemical Vapor Deposition for InP Heterojunction Bipolar Transistors” Appl. Phys. Lett. 58, 1386 (1996).
Dvorak, C. R. Bolognesi, O. J. Pitts, and S. P. Watkins, “300 GHz InP/GaAsSb/InP Double HBTs With High Current Capability and BVCEO≧ 6 V” IEEE Elec. Dev. Lett. 22, 361 (2001).
V. de Walle, “Band Lineups and Deformation Potentials in the Model-Solid Theory” Physical Review B 39, 1871 (1989).
M. Feng, N. Holonyak, Jr. and W. Hafez, “Light-Emitting Transistor: : Light Emission From InGaP/GaAs Heterojunction Bipolar Transistors”, Appl. Phys. Lett. 84, 151, Jan. 5, 2004.
J. Shibata, Y. Mori, Y. Sasai, N. Hase, H. Serizawa, and T. Kahwara “Fundamental Characteristics of an InGaAsP/InP Laser Transistor”, Electronic Letters, vol. 21, p. 98, 1985.
Jain F. et al.: “Resonant Tunneling Transistor Lasers: A New Approach to Obtain Multi-State Switching and Bistable Operation”, Internal Journal of Infrared and Millimeter Waves, Springer, Dordrecht, NL. vol. 14, No. 6, Jun. 1, 1993, pp. 1311-1322.
Mori Y. et al.: “Operation Principle of the InGaAsP/InP Laser Transistor”, Applied Physics Letters USA, vol. 47, No. 7, Oct. 1, 1985, pp. 649-651.
M. Feng, N. Holonyak and W. Hafez, “Quantum-Well-Base Heterojunction Bipolar Light-Emitting Transistor”, Applied Physics letters AIP USA, vol. 84, No. 11, Mar. 15, 2004, pp. 1952-1954.
M. Feng, N. Holonyak and R. Chan, “Light-Emitting Transistor: Light Emission From InGaP/GaAs Heterojunction Bipolar Transistors”, Applied Physics letters AIP USA, vol. 84, No. 1, Jan. 4, 2004, pp. 151-153.
Feng Milton
Holonyak, Jr. Nick
Nguyen Ha T.
Novack Martin
The Board of Trustees of the University of Illinois
Tran Thanh
LandOfFree
Method for increasing the speed of a light emitting biopolar... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for increasing the speed of a light emitting biopolar..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for increasing the speed of a light emitting biopolar... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2789856