Method for improving the thermal stability of silicide

Details Method for improving the thermal stability of silicide Method for improving the thermal stability of silicide

2006-07-11

2010-02-23

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S232000, C438S197000

Reexamination Certificate

active

07666729

ABSTRACT:
An embodiment of the invention is a method of making a transistor by performing an ion implant on a gate electrode layer110. The method may include forming an interface layer200over the semiconductor substrate20and performing an anneal to create a silicide190on the top surface of the gate electrode110.

REFERENCES:
patent: 6339021 (2002-01-01), Tan et al.
patent: 6879007 (2005-04-01), Takamura
patent: 6893909 (2005-05-01), Wang et al.
patent: 7205234 (2007-04-01), Wu et al.
Jiong-Ping Lu et al., “A Capacitor Formed on a Recrystallized Polysilicon Layer and a Method of Manufacture Therefor” U.S. Appl. No. 10/722,013, filed Nov. 25, 2003.
J.P. Lu et al., “Nickel Salicide Technology for Sub-100NM CMOS Devices” Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, 2004, pp. 159-173, ElectroChemical Society.

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