Method for improving the performance of flash memory by...

Details Method for improving the performance of flash memory by... Method for improving the performance of flash memory by...

2006-06-02

2010-02-09

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S488000, C257SE21001

Reexamination Certificate

active

07659167

ABSTRACT:
This invention provides a method for forming polysilicon by using silane with introducing hydrogen, such that polysilicon is microcrystalline. This microcrystal polysilicon can be applied to floating gate of flash memory to improve the character of flash memory.

REFERENCES:
patent: 6465308 (2002-10-01), Cheng et al.
patent: 2003/0047734 (2003-03-01), Fu et al.

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