Method for improving the intermediate dielectric profile, partic

Details Method for improving the intermediate dielectric profile, partic Method for improving the intermediate dielectric profile, partic

1997-02-19

1999-04-13

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

058940650

ABSTRACT:
A method for improving the intermediate dielectric profile, particularly for non-volatile memories constituted by a plurality of cells, including the following steps: forming field oxide regions and drain active area regions on a substrate; forming word lines on the field oxide regions; depositing oxide to form oxide wings that are adjacent to the word lines; opening, by masking, source regions and the drain active area regions, keeping the field oxide regions that separate one memory cell from the other, inside the memory, covered with resist; and removing field oxide in the source regions and removing oxide wings from both sides of the word lines.

REFERENCES:
patent: 5087584 (1992-02-01), Wada et al.
patent: 5256584 (1993-10-01), Hartmann
patent: 5330924 (1994-07-01), Huang
European Search Report from European Patent Application 96830086.3, filed Feb. 28, 1996.

Affiliated with

Also associated with

Rating

Method for improving the intermediate dielectric profile, partic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for improving the intermediate dielectric profile, partic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving the intermediate dielectric profile, partic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-223776