Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2006-03-14
2006-03-14
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S318000, C438S478000
Reexamination Certificate
active
07012009
ABSTRACT:
A method for making an improved silicon-germanium layer on a substrate for the base of a heterojunction bipolar transistor is achieved using a two-temperature process. The method involves growing a seed layer at a higher temperature to reduce the grain size with shorter reaction times, and then growing an epitaxial Si—Ge layer with a Si cap layer at a lower temperature to form the intrinsic base with low boron out-diffusion. This results in an HBT having the desired narrow base profile while minimizing the discontinuities (voids) in the Si—Ge layer over the insulator to provide good electrical contacts and uniformity to the intrinsic base.
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Chang Tien-Chih
Chen Chia-Lin
Chen Shih-Chang
Lee Kuen-Chyr
Liang Mong-Song
Dang Trung
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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