Method for improving semiconductor dielectrics

Details Method for improving semiconductor dielectrics Method for improving semiconductor dielectrics

1998-08-12

2000-10-24

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438779, 438780, 438781, 438618, 438670, 438637, H01L 2131

Patent

active

06136729&

ABSTRACT:
An ultra-large scale integrated circuit is manufactured by using silicon-based, low dielectric materials on a wafer in which the hydrophobic nature of the dielectric materials is improved by relative low temperature heating in a vacuum or inert atmosphere, slowly increasing the wafer temperature to the hard bake temperature at a predetermined ramp rate, and heating the wafer at the hard bake temperature for a predetermine amount of time. As a result, the dielectric material can repel wet etch chemicals and minimize the formation of holes in the dielectric materials due to etching by wet etch chemicals.

REFERENCES:
patent: 5370904 (1994-12-01), Mine et al.
patent: 5899751 (1999-05-01), Chang et al.
patent: 5976966 (1999-11-01), Inoue

Affiliated with

Also associated with

Rating

Method for improving semiconductor dielectrics does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for improving semiconductor dielectrics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving semiconductor dielectrics will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1963713