Method for improving mechanical properties of low dielectric...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S761000, C438S788000, C257SE21276, C257SE21277

Reexamination Certificate

active

07622400

ABSTRACT:
Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a substrate, followed by treating the sub-layer with a plasma. The process of depositing and plasma treating the sub-layers is repeated until a desired thickness has been reached.

REFERENCES:
patent: 4357451 (1982-11-01), McDaniel
patent: 4882008 (1989-11-01), Garza et al.
patent: 4885262 (1989-12-01), Ting et al.
patent: 4968384 (1990-11-01), Asano
patent: 5281546 (1994-01-01), Possin et al.
patent: 5504042 (1996-04-01), Cho et al.
patent: 5648175 (1997-07-01), Russell et al.
patent: 5686054 (1997-11-01), Barthel et al.
patent: 5700844 (1997-12-01), Hedrick et al.
patent: 5789027 (1998-08-01), Watkins et al.
patent: 5849640 (1998-12-01), Hsia et al.
patent: 5851715 (1998-12-01), Barthel et al.
patent: 5858457 (1999-01-01), Brinker et al.
patent: 5920790 (1999-07-01), Wetzel et al.
patent: 6140252 (2000-10-01), Cho et al.
patent: 6149828 (2000-11-01), Vaartstra
patent: 6171661 (2001-01-01), Zheng et al.
patent: 6177329 (2001-01-01), Pang
patent: 6232658 (2001-05-01), Catabay et al.
patent: 6258735 (2001-07-01), Xia et al.
patent: 6268276 (2001-07-01), Chan et al.
patent: 6268288 (2001-07-01), Hautala et al.
patent: 6270846 (2001-08-01), Brinker et al.
patent: 6271273 (2001-08-01), You et al.
patent: 6306564 (2001-10-01), Mullee
patent: 6312793 (2001-11-01), Grill et al.
patent: 6329017 (2001-12-01), Liu et al.
patent: 6329062 (2001-12-01), Gaynor
patent: 6331480 (2001-12-01), Tsai et al.
patent: 6340628 (2002-01-01), Van Cleemput et al.
patent: 6365266 (2002-04-01), MacDougall et al.
patent: 6365528 (2002-04-01), Sukharev et al.
patent: 6383466 (2002-05-01), Domansky et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6386466 (2002-05-01), Ozawa et al.
patent: 6387453 (2002-05-01), Brinker et al.
patent: 6391932 (2002-05-01), Gore et al.
patent: 6392017 (2002-05-01), Chandrashekar
patent: 6407013 (2002-06-01), Li et al.
patent: 6413583 (2002-07-01), Moghadam et al.
patent: 6420441 (2002-07-01), Allen et al.
patent: 6444036 (2002-09-01), Chern et al.
patent: 6444715 (2002-09-01), Mukherjee et al.
patent: 6455417 (2002-09-01), Bao et al.
patent: 6479374 (2002-11-01), Ioka et al.
patent: 6500770 (2002-12-01), Cheng et al.
patent: 6548113 (2003-04-01), Birnbaum et al.
patent: 6566278 (2003-05-01), Harvey et al.
patent: 6570256 (2003-05-01), Conti et al.
patent: 6572925 (2003-06-01), Zubkov et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6576345 (2003-06-01), Cleemput et al.
patent: 6596467 (2003-07-01), Gallagher et al.
patent: 6596654 (2003-07-01), Bayman et al.
patent: 6610362 (2003-08-01), Towle
patent: 6632478 (2003-10-01), Gaillard et al.
patent: 6662631 (2003-12-01), Baklanov et al.
patent: 6667147 (2003-12-01), Gallagher et al.
patent: 6677251 (2004-01-01), Lu et al.
patent: 6677253 (2004-01-01), Andideh et al.
patent: 6680262 (2004-01-01), Andideh et al.
patent: 6715498 (2004-04-01), Humayun et al.
patent: 6734118 (2004-05-01), Kloster et al.
patent: 6756085 (2004-06-01), Waldfried et al.
patent: 6797643 (2004-09-01), Rocha-Alvarez et al.
patent: 6805801 (2004-10-01), Humayun et al.
patent: 6812043 (2004-11-01), Bao et al.
patent: 6815373 (2004-11-01), Singh et al.
patent: 6831284 (2004-12-01), Demos et al.
patent: 6846380 (2005-01-01), Dickinson et al.
patent: 6848458 (2005-02-01), Shrinivasan et al.
patent: 6849549 (2005-02-01), Chiou et al.
patent: 6867086 (2005-03-01), Chen et al.
patent: 6903004 (2005-06-01), Spencer et al.
patent: 6914014 (2005-07-01), Li et al.
patent: 6943121 (2005-09-01), Leu et al.
patent: 6991959 (2006-01-01), Goundar et al.
patent: 7018918 (2006-03-01), Kloster et al.
patent: 7087271 (2006-08-01), Rhee et al.
patent: 7094713 (2006-08-01), Niu et al.
patent: 7098149 (2006-08-01), Lukas et al.
patent: 7176144 (2007-02-01), Wang et al.
patent: 7326444 (2008-02-01), Wu et al.
patent: 7341761 (2008-03-01), Wu et al.
patent: 7381662 (2008-06-01), Niu et al.
patent: 7390537 (2008-06-01), Wu et al.
patent: 2002/0001973 (2002-01-01), Wu et al.
patent: 2002/0016085 (2002-02-01), Huang et al.
patent: 2002/0034626 (2002-03-01), Liu et al.
patent: 2002/0064341 (2002-05-01), Fauver et al.
patent: 2002/0076946 (2002-06-01), Kim et al.
patent: 2002/0106500 (2002-08-01), Albano et al.
patent: 2002/0123240 (2002-09-01), Gallagher et al.
patent: 2002/0132496 (2002-09-01), Ball et al.
patent: 2002/0141024 (2002-10-01), Retschke et al.
patent: 2002/0192980 (2002-12-01), Hogle et al.
patent: 2003/0049375 (2003-03-01), Nguyen et al.
patent: 2003/0064607 (2003-04-01), Leu et al.
patent: 2003/0066544 (2003-04-01), Jur et al.
patent: 2003/0111263 (2003-06-01), Fornof et al.
patent: 2003/0119307 (2003-06-01), Bekiaris et al.
patent: 2003/0157248 (2003-08-01), Watkins et al.
patent: 2003/0198895 (2003-10-01), Toma et al.
patent: 2003/0224156 (2003-12-01), Kirner et al.
patent: 2004/0018717 (2004-01-01), Fornof et al.
patent: 2004/0069410 (2004-04-01), Moghadam et al.
patent: 2004/0096586 (2004-05-01), Schulberg et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0099952 (2004-05-01), Goodner et al.
patent: 2004/0101633 (2004-05-01), Zheng et al.
patent: 2004/0102031 (2004-05-01), Kloster et al.
patent: 2004/0102032 (2004-05-01), Kloster et al.
patent: 2004/0151845 (2004-08-01), Nguyen et al.
patent: 2004/0161532 (2004-08-01), Kloster et al.
patent: 2004/0170760 (2004-09-01), Meagley et al.
patent: 2004/0185679 (2004-09-01), Ott et al.
patent: 2004/0213911 (2004-10-01), Misawa et al.
patent: 2004/0249006 (2004-12-01), Gleason et al.
patent: 2005/0045206 (2005-03-01), Smith et al.
patent: 2005/0064698 (2005-03-01), Chang et al.
patent: 2005/0095840 (2005-05-01), Bhanap et al.
patent: 2005/0230834 (2005-10-01), Schmitt et al.
patent: 2005/0260357 (2005-11-01), Olsen et al.
patent: 2006/0040507 (2006-02-01), Mak et al.
patent: 2006/0105566 (2006-05-01), Waldfried et al.
patent: 2006/0110931 (2006-05-01), Fukazawa et al.
patent: 2006/0145305 (2006-07-01), Boyanov et al.
patent: 2006/0178006 (2006-08-01), Xu et al.
patent: 2006/0197881 (2006-09-01), Kang et al.
patent: 2007/0077751 (2007-04-01), Chen et al.
patent: 2007/0128882 (2007-06-01), Nguyen et al.
patent: 2008/0194105 (2008-08-01), Dominguez et al.
patent: WO95/07543 (1995-03-01), None
patent: WO 02/21593 (2002-03-01), None
patent: WO 03/005429 (2003-01-01), None
U.S. Office Action mailed Aug. 24, 2005, from U.S. Appl. No. 10/404,693.
U.S. Office Action mailed Sep. 1, 2005, from U.S. Appl. No. 10/672,305.
U.S. Office Action mailed Jul. 13, 2005, from U.S. Appl. No. 10/672,311.
U.S. Office Action mailed Jul. 27, 2005, from U.S. Appl. No. 10/785,235.
Cho et al., “Method for Porogen Removal and Mechanical Strength Enhancement of Low-K Carbon Doped Silicon Oxide Using Low Thermal Budget Microwave Curing”, U.S. Appl. No. 11/280,113, filed Nov. 15, 2005.
U.S. Office Action mailed Jan. 9, 2006, from U.S Appl. No. 10/785,235.
U.S. Office Action mailed Dec. 27, 2005, from U.S Appl. No. 10/789,103.
U.S. Office Action mailed Dec. 23, 2005, from U.S Appl. No. 10/800,409.
U.S. Office Action mailed Feb. 7, 2006, from U.S Appl. No. 10/672,305.
U.S. Office Action mailed Dec. 20, 2005, from U.S Appl. No. 10/672,311.
Subramonium et al., “Pulsed PECVD Method for Modulating Hydrogen Content in Hard Mask”, U.S. Appl. No. 11/318,269, filed Dec. 23, 2005.
U.S. Office Action mailed Feb. 28, 2006, from U.S. Appl. No. 10/404,693.
U.S. Office Action mailed Mar. 29, 2006, from U.S. Appl. No. 10/800,377.
U.S. Office Action mailed May 31, 2006, from U.S. Appl. No. 10/941,502.
U.S. Office Action mailed May 30, 2006, from U.S. Appl. No. 10/785,235.
U.S. Office Action mailed May 2, 2006, from U.S. Appl. No. 11/050,621.
U.S. Office Action mailed Jun. 15, 2006, from U.S Appl. No. 10/800,409.
Kelman et al., “Method for Reducing Stress in Porous Dielectric Films”, U.S. Appl. No. 11/369,311, filed Mar. 6, 2006.
U.S. Office Action mailed Jun. 28, 2

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for improving mechanical properties of low dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for improving mechanical properties of low dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving mechanical properties of low dielectric... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4099282

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.