Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reissue Patent
2003-05-21
2008-03-04
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S306000, C438S307000, C438S515000
Reissue Patent
active
RE040138
ABSTRACT:
A process for fabricating input/output, N channel, (I/O NMOS) devices, featuring an ion implanted nitrogen region, used to reduce hot carrier electron, (HEC), injection, has been developed. The process features implanting a nitorgen region, at the interface of an overlying silicon oxide layer, and an underlying lightly doped source/drain, (LDD), region. The implantation procedure can either be performed prior to, or after, the deposition of a silicon oxide liner layer, in both cases resulting in a desired nitrogen pile-up at the oxide-LDD interface, as well as resulting, in a more graded LDD profile. An increase in the time to fail, in regards to HCE injection, for these I/O NMOS devices, is realized, when compared to counterparts fabricated without the nitrogen implantation procedure.
REFERENCES:
patent: 5108935 (1992-04-01), Rodder
patent: 5597744 (1997-01-01), Kamiyama et al.
patent: 5885877 (1999-03-01), Gardner et al.
patent: 5920782 (1999-07-01), Shih et al.
patent: 5972783 (1999-10-01), Arai et al.
patent: 5994175 (1999-11-01), Gardner et al.
Chiang Mu-Chi
Lin Hsien-Chin
Shih Jiaw-Ren
Pham Long
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Method for improving hot carrier lifetime via a nitrogen... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for improving hot carrier lifetime via a nitrogen..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving hot carrier lifetime via a nitrogen... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3974907