Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-05-17
2005-05-17
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S775000, C438S786000
Reexamination Certificate
active
06893979
ABSTRACT:
A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
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D'Emic Christopher P.
Hwang Thomas T.
Jamison Paul C.
Khare Mukesh V.
Quinlivan James J.
International Business Machines - Corporation
Pepper Margaret A.
Toledo Fernando L.
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