Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-06-19
2007-06-19
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S527000, C438S914000, C257SE21633
Reexamination Certificate
active
10956583
ABSTRACT:
The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.
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Christopher Campbell, et al.; “Beam Angle Control on the VIISta 80 Ion Implanter”.
Bernstein James D.
Ghneim Said
Loewecke Jeffrey
Robertson Lance S.
Xu Jiejie
Brady III W. James
Estrada Michelle
McLarty Peter K.
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