Method for hard mask CD trim

Details Method for hard mask CD trim Method for hard mask CD trim

2007-06-22

2010-02-23

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S510000, C257SE21038, C257SE21023, C257SE21035, C257S235000, C438S229000, C438S313000

Reexamination Certificate

active

07667281

ABSTRACT:
Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an inductively coupled etching apparatus. The high density plasma is set and controlled to isotropically contact particular regions of the inorganic material to allow for trimming and control of a critical dimension associated with the inorganic material.

REFERENCES:
patent: 6218309 (2001-04-01), Miller et al.
patent: 6664156 (2003-12-01), Ang et al.
patent: 6821713 (2004-11-01), Holbrook et al.
patent: 2002/0076877 (2002-06-01), Gupta et al.
patent: 2002/0127763 (2002-09-01), Arafa et al.
patent: 2003/0027414 (2003-02-01), Ko
patent: 2007/0254461 (2007-11-01), Wei et al.

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