Method for growth of nitrogen face (N-face) polarity...

Details Method for growth of nitrogen face (N-face) polarity... Method for growth of nitrogen face (N-face) polarity...

2010-08-10

2011-12-20

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S680000, C438S698000, C438S778000, C438S508000

Reexamination Certificate

active

08080466

ABSTRACT:
Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere.

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patent: 2011/0027973 (2011-02-01), Su et al.
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