4. Semiconductor device manufacturing: process
  5. Coating with electrically or thermally conductive material
  6. To form ohmic contact to semiconductive material

Olga Kryliouk

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GaN growth on Si using ZnO buffer layer

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate

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Group III-nitride growth on Si substrate using oxynitride...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Ii-vi compound
Reexamination Certificate

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Group III-nitride on Si using epitaxial BP buffer layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Method and apparatus for producing group-III nitrides

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate

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Method and apparatus for producing group-III nitrides

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2084546

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