Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent
1997-07-03
1999-06-22
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
438931, H01L 21306
Patent
active
059151943
ABSTRACT:
A method of growing atomically-flat surfaces and high-quality low-defect crystal films of polytypic compounds heteroepitaxially on polytypic compound substrates that are different than the crystal film. The method is particularly suited for the growth of 3C-SiC, 2H-AlN, and 2H-GaN on 6H-SiC.
REFERENCES:
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patent: 5463978 (1995-11-01), Larkin
Recent Progress in SiC Crystal Growth l l l Paper presented at Silicon Carbide and Related Materials 1995 Conf., Kyoto, Japan, 1996 by V. F. Tsvetkov, S. T. Allen, H. S. Kong and C. H. Carter, Jr.
Extremely Flat Layer Surfaces in Liquid Phase Epitaxy of GaAs and AlxGa1-xAs . . . Journal of Crystal Growth 87 (1988) in North-Holland, Amsterdam by U. Murlock, M. Kelsch and E. Bauser.
Control of the polytypes (3C,2H) of silicon carbide thin films deposited on pseudomorphic aluminum nitride (0001) surfaces . . . Inst. Phys. Conf. Ser. No. 142; Chapter 1 presented at Silicon Carbide and Related Maerials 1995 Conf . . . Kyoto, Japan.
Initial stages of growth of Sic and A1N thin films on vicinal and on-axis surfaces of 6H-Sic(0001) . . . presented at Silicon Cardide and Related Materials 1995 Conf . . . Kyoto, Japan.
Nucleartion and Step motion in chemical vapor deposition of SiC on 6H-SiC(0001) faces. 1994 American Institute of Physics, Dec. 1994 by Tsunenobu Kimoto and Hiroyuki Matsinami.
Larkin David J.
Matus Lawrence G.
Neudeck Philip G.
Powell J. Anthony
Bowers Charles
Christianson Keith
Stone Kent N.
The United States of America as represented by the Administrator
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