Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Patent
1996-12-03
1999-07-06
Niebling, John F.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
438795, 438909, M01L 2131
Patent
active
059207973
ABSTRACT:
A method of reducing stress on a substrate in a thermal processing chamber. The method includes the steps of supporting a first portion of a substrate by means of contacting the same such that a second portion of the substrate is not contacted, part of the second portion forming one wall of a cavity, and flowing a gas into the cavity such that the pressure of the gas exerts a force on the second portion to at least partially support the second portion.
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patent: 4903754 (1990-02-01), Hirscher
patent: 5445677 (1995-08-01), Kawata et al.
patent: 5511608 (1996-04-01), Boyd
patent: 5574247 (1996-11-01), Nishitani
patent: 5795215 (1998-08-01), Guthrie et al.
Ballance David S.
Bierman Benjamin
Haas Brian
Tietz James V.
Applied Materials Inc.
Lebentritt Michael S.
Niebling John F.
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