Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1998-05-01
2000-08-08
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430314, 430317, 438303, 216 46, G03F 720
Patent
active
061000132
ABSTRACT:
The preferred embodiment of the present invention provides a transistor structure and method for fabricating the same that overcomes the disadvantages of the prior art. In particular, the preferred structure and method results in lower leakage and junction capacitance by using raised source and drains which are partially isolated from the substrate by a dielectric layer. The raised source and drains are preferably fabricated from the same material layer used to form the transistor gate. The preferred method for fabricating the transistor uses hybrid resist to accurately pattern the gate material layer into regions for the gate, the source and the drain. The source and drain regions are then connected to the substrate by growing silicon. The preferred method thus results in an improved transistor structure while not requiring excessive fabrication steps.
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Brown Jeffery S.
Dunn James S.
Holmes Steven J.
Horak David V.
Leidy Robert K.
Duda Kathleen
International Business Machines - Corporation
Shkurko Eugene I.
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