Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-15
2010-11-30
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S675000, C257SE21585
Reexamination Certificate
active
07842571
ABSTRACT:
In one embodiment a semiconductor device includes odd contacts and respective odd lines. Spacers are formed on sidewalls of the odd lines and even openings for even lines are formed by performing an etching process. Even contacts are formed in the even openings and then even lines are formed.
REFERENCES:
patent: 6153513 (2000-11-01), Lee et al.
patent: 6528418 (2003-03-01), Kim et al.
patent: 2003/0022484 (2003-01-01), Lee
patent: 2003-17590 (2003-01-01), None
patent: 1998-083674 (1998-12-01), None
patent: 10-2000-0042845 (2000-07-01), None
patent: 2000-0044952 (2000-07-01), None
patent: 10-2000-0074199 (2000-12-01), None
patent: 10-2005-0002005 (2005-01-01), None
English language abstract of Korean Publication No. 1998-083674.
English language abstract of Korean Publication No. 10-2000-0042845.
English language abstract of Korean Publication No. 10-2000-0074199.
Kim Jin-Ho
Kim Ki-Nam
Kwak Dong-Hwa
Park Jae-Kwan
Sim Jae-Hwang
Chaudhari Chandra
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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