Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-28
2011-06-28
Wagner, Jenny L. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE23168
Reexamination Certificate
active
07968451
ABSTRACT:
A method for fabricating an integrated circuit comprises forming a low-k dielectric layer over a semiconductor substrate, etching the low-k dielectric layer to form an opening, and treating the low-k dielectric layer with a gaseous organic chemical to cause a reaction between the low-k dielectric layer and the gaseous organic chemical. The gaseous organic chemical is free from silicon.
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Ko, C.C., et al., “Dielectric/TaN Interface Design with Self-Assembled Monolayer Liner for 45nm & Beyond Cu/Porous Low-k Damascene Interconnects,” IEEE 2006, pp. 224-226.
Bao Tien-I
Chou Chia-Cheng
Ko Chung-Chi
Lin Keng-Chu
Yu Chen-Hua
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Wagner Jenny L.
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