Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-17
2006-10-17
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S592000, C438S682000, C438S683000, C257S388000, C257S407000, C257S412000
Reexamination Certificate
active
07122472
ABSTRACT:
A method of forming a dual self-aligned fully silicided gate in a CMOS device requiring only one lithography level, wherein the method comprises forming a first type semiconductor device having a first well region in a semiconductor substrate, first source/drain silicide areas in the first well region, and a first type gate isolated from the first source/drain silicide areas; forming a second type semiconductor device having a second well region in the semiconductor substrate, second source/drain silicide areas in the second well region, and a second type gate isolated from the second source/drain silicide areas; selectively forming a first metal layer over the second type semiconductor device; performing a first fully silicided (FUSI) gate formation on only the second type gate; depositing a second metal layer over the first and second type semiconductor devices; and performing a second FUSI gate formation on only the first type gate.
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Cabral, Jr. Cyril
Dziobkowski Chester T.
Fang Sunfei
Lavoie Christian
Wann Clement H.
Cioffi, Esq. James J.
Gibb I.P. Law Firm LLC
Jr. Carl Whitehead
Rodgers Colleen E.
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