Method for forming patterns of semiconductor device

Details Method for forming patterns of semiconductor device Method for forming patterns of semiconductor device

2011-01-04

2011-01-04

Duda, Kathleen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

Reexamination Certificate

active

07862988

ABSTRACT:
Provided is a method for forming patterns of a semiconductor device. According to the method, first mask patterns may be formed on a substrate, and second mask patterns may be formed on sidewalls of each first mask pattern. Third mask patterns may fill spaces formed between adjacent second mask patterns, and the second mask patterns may be removed. A portion of the substrate may then be removed using the first and third mask patterns as etch masks.

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English Translation: KR 2002-0046040; Jun. 20, 2009.

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