Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Reexamination Certificate
2006-04-12
2008-11-11
Rosasco, Stephen (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
C430S323000
Reexamination Certificate
active
07449285
ABSTRACT:
A mask pattern to be provided on a transparent substrate2includes a semi-light-shielding portion3which transmits exposure light in the same phase as that of the light-transmitting portion4and a phase shifter5which transmits exposure light in a phase opposite to that of the light-transmitting portion4. The semi-light-shielding portion3has a transmittance which allows exposure light to be partially transmitted. The phase shifter5is provided in a region of the mask pattern in which light transmitted through the phase shifter5can cancel part of the light transmitted through the light-transmitting portion4and the semi-light-transmitting portion3.
REFERENCES:
patent: 5302477 (1994-04-01), Dao et al.
patent: 5429896 (1995-07-01), Hasegawa et al.
patent: 6326107 (2001-12-01), Watanabe
patent: 6593033 (2003-07-01), Ma et al.
patent: 6803155 (2004-10-01), Dulman et al.
patent: 2002/0177050 (2002-11-01), Tanaka
patent: 2 269 915 (1994-02-01), None
patent: 3-15845 (1991-01-01), None
patent: 5-197130 (1993-08-01), None
patent: 6-289594 (1994-10-01), None
patent: 9-269590 (1997-10-01), None
patent: 10-48806 (1998-02-01), None
patent: 2000-19710 (2000-01-01), None
patent: 2000-267255 (2000-09-01), None
patent: 454255 (2001-09-01), None
patent: WO 03/062923 (2003-07-01), None
Japanese Office Action issued in corresponding Japanese Patent Application No. JP 2005-348362, dated Mar. 13, 2007.
Japanese Office Action issued in corresponding Japanese Patent Application No. JP 2005-347649, dated Mar. 13, 2007.
Hua-Yu Liu et al., “The Application of Alternating Phase-shifting Masks to 140 nm Gate Patterning (II): Mask Design and Manufacturing Tolerances”, Optical Microlithography XI, SPIE-The International Society for Optical Engineering, vol. 3334, pp. 1-14, Feb. 25-27, 1998.
McDermott Will & Emery LLP
Panasonic Corporation
Rosasco Stephen
LandOfFree
Method for forming pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming pattern will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4027326