Method for forming oxide film in semiconductor device

Details Method for forming oxide film in semiconductor device Method for forming oxide film in semiconductor device

2008-05-06

2008-05-06

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21625

Reexamination Certificate

active

07368400

ABSTRACT:
The present invention relates to a method for forming an oxide film in semiconductor devices. According to the present invention, after an oxide film is formed, interface trap charge and oxide trap charge can be reduced through a high-temperature thermal treatment process and a pre-treatment thermal process. Further, as an oxide film of a high quality whose trap charge is reduced is formed, reliability of a device is improved and variation in the threshold voltage is prevented.

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patent: 1998-55759 (1998-11-01), None
Foreign Office Action for Chinese Patent Application 200510003881.3.

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