Method for forming non-volatile memory devices

Details Method for forming non-volatile memory devices Method for forming non-volatile memory devices

2008-07-22

2008-07-22

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S593000, C438S508000, C438S508000, C257S315000, C257S314000

Reexamination Certificate

active

07402493

ABSTRACT:
According to a nonvolatile memory device having a multi gate structure and a method for forming the same of the present invention, a gate electrode is formed using a damascene process. Therefore, a charge storage layer, a tunneling insulating layer, a blocking insulating layer and a gate electrode layer are not attacked from etching in a process for forming the gate electrode, thereby forming a nonvolatile memory device having good reliability.

REFERENCES:
patent: 6657252 (2003-12-01), Fried et al.
patent: 2003-0020644 (2003-03-01), None
patent: 2003-0065864 (2003-08-01), None
patent: 10-0420070 (2004-02-01), None

Affiliated with

Also associated with

Rating

Method for forming non-volatile memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming non-volatile memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming non-volatile memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2811400