Method for forming multi-gate non-volatile memory devices...

Details Method for forming multi-gate non-volatile memory devices... Method for forming multi-gate non-volatile memory devices...

2008-06-09

2009-10-13

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S587000, C438S593000, C438S594000, C438S596000, C257S239000, C257S261000, C257SE29129

Reexamination Certificate

active

07601592

ABSTRACT:
According to a nonvolatile memory device having a multi gate structure and a method for forming the same of the present invention, a gate electrode is formed using a damascene process. Therefore, a charge storage layer, a tunneling insulating layer, a blocking insulating layer and a gate electrode layer are not attacked from etching in a process for forming the gate electrode, thereby forming a nonvolatile memory device having good reliability.

REFERENCES:
patent: 6413802 (2002-07-01), Hu et al.
patent: 6589827 (2003-07-01), Kubo et al.
patent: 6657252 (2003-12-01), Fried et al.
patent: 6762467 (2004-07-01), Jong et al.
patent: 6768158 (2004-07-01), Lee et al.
patent: 6838322 (2005-01-01), Pham et al.
patent: 6838725 (2005-01-01), Lin et al.
patent: 6921700 (2005-07-01), Orlowski et al.
patent: 2001/0000112 (2001-04-01), Lin et al.
patent: 2002/0019101 (2002-02-01), Kubo et al.
patent: 2002/0034869 (2002-03-01), Kao
patent: 2003/0042531 (2003-03-01), Lee et al.
patent: 2003/0151077 (2003-08-01), Mathew et al.
patent: 2003/0193062 (2003-10-01), Jong et al.
patent: 2005/0023619 (2005-02-01), Orlowski et al.
patent: 2003-0020644 (2003-03-01), None
patent: 2003-0065864 (2003-08-01), None
Hisamoto, Digh et al., FinFET—A Self-Aligned Double-Gate MOSFET Scalable to 20nm, Dec. 2000, IEEE transactions on Electron Devices, vol. 47, No. 12, pp. 2320-2325.
Katsumata, R. et al., Fin-Array-FET on bulk silicon for sub-100nm Trench Capacitor DRAM, 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 61-62.

Affiliated with

Also associated with

Rating

Method for forming multi-gate non-volatile memory devices... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming multi-gate non-volatile memory devices..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming multi-gate non-volatile memory devices... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4066633