Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-10-24
2000-09-19
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438624, 438784, 438783, H01L 2131, H01L 21469
Patent
active
061211648
ABSTRACT:
A method and apparatus for forming a halogen-doped silicon oxide film, preferably a fluorinated silicon glass (FSG) film, having compressive stress less than about -5.times.10.sup.8 dynes/cm.sup.2. In a specific embodiment, the FSG film is formed by a sub-atmospheric CVD thermal process at a pressure of between about 60-650 torr. The relatively thin film, besides having a low dielectric constant and good gap fill capability, has low compressive stress, and is particularly suitable for use as an intermetal (IMD) layer.
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Lee Peter
Nguyen Bang
Robles Stuardo
Yieh Ellie
Zhang Xin
Applied Materials Inc.
Bowers Charles
Nguyen Thanh
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