Method for forming interlevel dielectric layer in semiconductor

Details Method for forming interlevel dielectric layer in semiconductor Method for forming interlevel dielectric layer in semiconductor

1998-10-01

2000-05-02

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438487, H01L 2131

Patent

active

060572515

ABSTRACT:
A method for stabilizing an interlevel dielectric layer formed by a chemical vapor deposition (CVD) process, using electron beams. A CVD oxide layer is formed on a semiconductor substrate. The CVD oxide layer is radiated with electron beams at a temperature of between approximately room temperature and approximately 500.degree. C. for a predetermined time, using an electron beam radiator, to densify the layer.

REFERENCES:
patent: 3617375 (1971-11-01), Marek et al.
patent: 3877980 (1975-04-01), Martin et al.
patent: 4495218 (1985-01-01), Azuma et al.
patent: 5232749 (1993-08-01), Gilton
patent: 5387546 (1995-02-01), Maeda et al.
patent: 5630905 (1997-05-01), Lynch et al.
patent: 5660957 (1997-08-01), Chou et al.
patent: 5883004 (1999-03-01), Shiu et al.

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