Method for forming interlayer dielectric film for...

Details Method for forming interlayer dielectric film for... Method for forming interlayer dielectric film for...

2004-11-24

2008-12-30

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S780000, C428S447000, C257S632000, C528S010000

Reexamination Certificate

active

07470634

ABSTRACT:
Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane. According to the method, the polyhedral molecular silsesquioxane is used as a monomer for a siloxane-based resin or as a pore-forming agent (porogen) to prepare a composition for forming a dielectric film, and the composition is coated on a substrate to form an interlayer dielectric film for a semiconductor device. The interlayer dielectric film formed by the method has a low dielectric constant and shows superior mechanical properties.

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